MEASUREMENT PARAMETERS OF STRUCTURES WITH COMPENSATION OF IMPACT
OF CAPACITANCE OF DIELECTRIC 

Tchaikovsky Victor Mikhailovich, candidate of technical sciences, associate professor, sub-department of radio engineering and radio, electronic systems, Penza State University, radiolokaci@yandex.ru

 621.317.733.011.4

Describes the approach to measuring of MDS structures, which has improved metrological characteristics and performs measurements with compensation of impact of capacitance of the dielectric, based on the selection of amperage, that flows trough the structure.

MDS (metal–dielectric–semiconductor), the measuring signal, the compensation effect, the allocation of the current flowing through the structure, iteration, the structural method of correction.